BS IEC 62047-47:2024 PDF

Semiconductor devices. Micro-electromechanical devices - Silicon based MEMS fabrication technology. Measurement method of bending strength of microstructures

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BS IEC 62047-47:2024

Semiconductor devices. Micro-electromechanical devices - Silicon based MEMS fabrication technology. Measurement method of bending strength of microstructures

Статус документа:: Действующий
Формат:: Электронный (PDF)
Дата публикации:: 31 августа 2024 г.
ICS:: 31.080.99
SKU:: BS IEC 62047-47:2024

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Abstract

1 Scope This part of IEC 62047 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology. With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.

BS IEC 62047-47:2024 PDF

Abstract

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