BS ISO 5618-1:2023 PDF

Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for GaN crystal surface defects - Classification of defects

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BS ISO 5618-1:2023

Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for GaN crystal surface defects - Classification of defects

Статус документа:: Действующий
Формат:: Электронный (PDF)
Дата публикации:: 30 ноября 2023 г.
ICS:: 81.060.30
SKU:: BS ISO 5618-1:2023

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Abstract

1 Scope This document gives a classification of the dislocations and process-induced defects, from among the various surface defects, that occur on single-crystal gallium nitride ( GaN ) substrates or single-crystal GaN films. It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films:

— single-crystal GaN substrate ;

— single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate ;

— single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al 2 O 3 ), silicon carbide ( SiC ) or silicon (Si) substrate .

It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c -axis of GaN is ≥ 8°.

BS ISO 5618-1:2023 PDF

Abstract

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